Optically Triggered Emergent Mesostructures in Monolayer WS2.

The ultrahigh surface area of two-dimensional materials can drive multimodal coupling between optical, electrical, and mechanical properties that leads to emergent dynamical responses not possible in three-dimensional systems. We observed that optical excitation of the WS2 monolayer above the exciton energy creates symmetrically patterned mechanical protrusions which can be controlled by laser intensity and wavelength. This observed photostrictive behavior is attributed to lattice expansion due to the formation of polarons, which are charge carriers dressed by lattice vibrations. Scanning Kelvin probe force microscopy measurements and density functional theory calculations reveal unconventional charge transport properties such as the spatially and optical intensity-dependent conversion in the WS2 monolayer from apparent n- to p-type and the subsequent formation of effective p-n junctions at the boundaries between regions with different defect densities. The strong opto-electrical-mechanical coupling in the WS2 monolayer reveals previously unexplored properties, which can lead to new applications in optically driven ultrathin microactuators.

Near-UV light emitting diode with on-chip photocatalysts for purification applications.

A new design for light-emitting diodes (LEDs) with on-chip photocatalysts is presented for purification applications. An array of disk-shaped TiO2, with a diameter of several hundred nanometers, combined with SiO2 pedestals was fabricated directly on the surface of an InGaN-based near-ultraviolet (UV) LED using a dry etching process. The high refractive-index contrast at the boundary and the circular shape can effectively confine the near-UV light generated from the LED through multiple internal reflections inside the TiO2 nanodisks. Such a feature results in the enhancement of light absorption by the photocatalytic TiO2. The degradation of the organic dye malachite green was monitored as a model photocatalytic reaction. The proposed structure of LEDs with TiO2/SiO2 nanodisk/pedestal array exhibited a photocatalytic activity that was three times higher than the activity of LEDs with a TiO2 planar layer. The integration of photocatalytic materials with near-UV LEDs in a single system is promising for various purification applications, such as sterilization and disinfection.

Improved efficiency of InGaN/GaN light-emitting diodes with perpendicular magnetic field gradients.

The effect of magnetic fields on the optical output power of flip-chip light-emitting diodes (LEDs) with InGaN/GaN multiple quantum wells (MQWs) was investigated. Films and circular disks comprising ferromagnetic cobalt/platinum (Co/Pt) multilayers were deposited on a p-ohmic reflector to apply magnetic fields in the direction perpendicular to the MQWs of the LEDs. At an injection current of 20 mA, the ferromagnetic Co/Pt multilayer film increased the optical output power of the LED by 20% compared to an LED without a ferromagnetic Co/Pt multilayer. Furthermore, the optical output power of the LED with circular disks was 40% higher at 20 mA than the output of the LED with a film. The increase of the optical output power of the LEDs featuring ferromagnetic Co/Pt multilayers is attributed to the magnetic field gradient in the MQWs, which increases the carrier path in the MQWs. The time-resolved photoluminescence measurement indicates that the improvement of optical output power is owing to an enhanced radiative recombination rate of the carriers in the MQWs as a result of the magnetic field gradient from the ferromagnetic Co/Pt multilayer.

Ultrasensitive and Stable Plasmonic Surface-Enhanced Raman Scattering Substrates Covered with Atomically Thin Monolayers: Effect of the Insulating Property.

We demonstrated the effects of monolayer graphene and hexagonal boron nitride (h-BN) on the stability and detection performance of two types of substrates in surface-enhanced Raman scattering (SERS): a two-dimensional (2D) monolayer/Ag nanoparticle (NP) substrate and a Au NP/2D monolayer/Ag NP substrate. Graphene and h-BN, which have different electrical and chemical properties, were introduced in close contact with the metal NPs and had distinctly different effects on the plasmonic near-field interactions between metal NPs in the subnanometer-scale gap and on the electron transport behavior. A quantitative comparison was possible due to reproducible SERS signals across the entire substrates prepared by simple and inexpensive fabrication methods. The hybrid platform, an insulating h-BN monolayer covering the Ag NP substrate, ensured the long-term oxidative stability for over 80 days, which was superior to the stability achieved using conducting graphene. Additionally, a sandwich structure using an h-BN monolayer exhibited excellent SERS sensitivity with a detection limit for rhodamine 6G as low as 10-12 M; to the best of our knowledge, this is the best SERS detection limit achieved using monolayer h-BN as a gap-control material. In this study, we suggest an efficient strategy for hybridizing the desired 2D layers with metal nanostructures for SERS applications, where the substrate stability and electromagnetic field enhancement are particularly crucial for the various applications that utilize metal/2D hybrid structures.

Crystal-Structure-Dependent Piezotronic and Piezo-Phototronic Effects of ZnO/ZnS Core/Shell Nanowires for Enhanced Electrical Transport and Photosensing Performance.

We report the crystal-structure-dependent piezotronic and piezo-phototronic effects of ZnO/ZnS core/shell nanowires (CS NWs) having different shell layer crystalline structures. The wurtzite (WZ) ZnO/WZ ZnS CS NWs showed higher electrical transport and photosensing properties under external strain than the WZ ZnO/zinc blende (ZB) ZnS CS NWs. The WZ ZnO/WZ ZnS CS NWs under a compressive strain of -0.24% showed 4.4 and 8.67 times larger increase in the output current (1.93 × 10-4 A) and photoresponsivity (8.76 × 10-1 A/W) than those under no strain. However, the WZ ZnO/ZB ZnS CS NWs under the same strain condition showed 3.2 and 2.16 times larger increase in the output current (1.13 × 10-4 A) and photoresponsivity (2.16 × 10-1 A/W) than those under no strain. This improvement is ascribed to strain-induced piezopolarization charges at both the WZ ZnO NWs and the grains of the WZ ZnS shell layer in WZ ZnO/WZ ZnS CS NWs, whereas piezopolarization charges are induced only in the ZnO core region of the WZ ZnO/ZB ZnS CS NWs. These charges can change the type-II band alignment in the ZnO and ZnS interfacial region as well as the Schottky barrier height at the junction between the semiconductor and the metal, thus facilitating electrical transport and reducing the recombination probability of charge carriers under UV irradiation.

Titanium oxide nanotube arrays for high light extraction efficiency of GaN-based vertical light-emitting diodes.

TiO2 nanotube (NT) arrays were fabricated on the surface of n-GaN through a liquid-phase conversion process using ZnO nanorods (NRs) as a template for high-efficiency InGaN/GaN multiple quantum well (MQW) vertical light-emitting diodes (VLEDs). The optical output power of the VLEDs with TiO2 NTs was remarkably enhanced by 23% and 189% at an injection current of 350 mA compared to those of VLEDs with ZnO NRs and planar VLEDs, respectively. The large enhancement in optical output is attributed to a synergistic effect of efficient light injection from the n-GaN layer of the VLED to TiO2 NTs because of the well-matched refractive indices and superior light extraction into air at the end of the TiO2 NTs. Light propagation along various configurations of TiO2 NTs on the VLEDs was investigated using finite-difference time domain simulations and the results indicated that the wall thickness of the TiO2 NTs should be maintained close to 20 nm for superior light extraction from the VLEDs.

Light-Emitting Diodes with Hierarchical and Multifunctional Surface Structures for High Light Extraction and an Antifouling Effect.

Bioinspired hierarchical structures on the surface of vertical light-emitting diodes (VLEDs) are demonstrated by combining a self-assembled dip-coating process and nanopatterning transfer method using thermal release tape. This versatile surface structure can efficiently reduce the total internal reflection and add functions, such as superhydrophobicity and high oleophobicity, to achieve an antifouling effect for VLEDs.

Vertically stacked color tunable light-emitting diodes fabricated using wafer bonding and transfer printing.

We report on the vertically stacked color tunable light-emitting diodes (LEDs) fabricated using wafer bonding with an indium tin oxide (ITO) layer and transfer printing by the laser lift-off process. Employing optically transparent and electrically conductive ITO as an adhesion layer enables to bond the GaN-based blue and AlGaInP-based yellow LEDs. We find out that the interdiffusion of In, O, and Ga at the interface between ITO and GaP allows the strong bonding of the heterogeneous optoelectronic materials and the integration of two different color LEDs on a single substrate. The efficacy of this method is demonstrated by showing the successful control of color coordinate from the vertically stacked LEDs by modulating the individual intensity of blue and yellow emissions.

Enhanced optical output power of InGaN/GaN vertical light-emitting diodes by ZnO nanorods on plasma-treated N-face GaN.

Light-emitting diodes (LEDs) play an important role as a formidable contender for next-generation lighting sources and rapidly replace conventional lighting sources. In this report, the growth of high density inclined ZnO nanorods (NRs) on the N-face n-GaN surface for high efficiency vertical light-emitting diodes (VLEDs) is demonstrated based on oxygen plasma pretreatment and hydrothermal growth. Surface modification by oxygen plasma pretreatment efficiently produces GaOx nanoparticles on the N-face n-GaN surface and they play an important role in the hydrothermal growth of dense and inclined ZnO NRs. The optical output power of ZnO NR VLEDs following oxygen plasma pretreatment is strongly enhanced by a factor of 3.25 at an injection current of 350 mA, compared to that of planar VLEDs. The large enhancement of optical power is attributed to the dense ZnO NR layer which efficiently reduces the total internal reflection and enhances the waveguide effect in ZnO NRs.

High-performance photoconductivity and electrical transport of ZnO/ZnS core/shell nanowires for multifunctional nanodevice applications.

We report the electrical and optical properties of ZnO/ZnS core/shell nanowire (NW) devices. The spatial separation of charge carriers due to their type II band structure together with passivation effect on ZnO/ZnS core/shell NWs not only enhanced their charge carrier transport characteristics by confining the electrons and reducing surface states in the ZnO channel but also increased the photocurrent under ultraviolet (UV) illumination by reducing the recombination probability of the photogenerated charge carriers. Here the efficacy of the type-II band structure and the passivation effect are demonstrated by showing the enhanced subthreshold swing (150 mV/decade) and mobility (17.2 cm2/(Vs)) of the electrical properties, as well as the high responsivity (4.4×10(6) A/W) in the optical properties of the ZnO/ZnS core/shell NWs, compared with the subthreshold swing (464 mV/decade), mobility (8.9 cm2/(Vs)) and responsivity (2.5×10(6) A/W) of ZnO NWs.